1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK1273 features directly driver by ics having a 5v power source. has low on-satate resistance r ds(on) =1.00 max.@v gs =4.0v,i d =0.5a r ds(on) =0.65 max.@v gs =10v,i d =0.5a not necessary to consider driving current because of its high input impedance. possible to reduce the number of parts by omitting the biasresistor. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d 2.0 a drain current(pulse) * i d 4.0 a power dissipation p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 50% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 1.7 2.5 v forward transfer admittance y fs v ds =10v,i d =0.5a 0.4 s v gs =4.0v,i d =0.5a 0.31 1.00 v gs =10v,i d =0.5a 0.24 0.65 input capacitance c iss 220 pf output capacitance c oss 105 pf reverse transfer capacitance c rss 16 pf turn-on delay time t d(on) 15 ns rise time t r 35 ns turn-off delay time t d(off) 380 ns fall time t f 120 ns v ds =10v,v gs =0,f=1mhz i d =0.5a,v gs(on) =10v,r l =50 ,v dd =25v,r g =10 drain to source on-state resistance r ds(on) marking marking na smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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